| GaN基大功率白光LED的高温老化特性 |
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| 引用本文： | 周舟,冯士维,张光沉,郭春生,李静婉. GaN基大功率白光LED的高温老化特性[J]. 发光学报, 2011, 32(10): 1046-1050 |
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| 作者姓名： | 周舟 冯士维 张光沉 郭春生 李静婉 |
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| 作者单位： | 北京工业大学 电子信息与控制工程学院, 北京 100124 |
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| 基金项目： | 北京市自然科学基金(4092005);国家“863”计划(2009AA032704);教育部博士点基金(20091103110006)资助项目 |
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| 摘 要： | 对大功率GaN基白光LED在85℃下进行了高温加速老化实验.经6500 h的老化,样品光通量退化幅度为28％ ～33％.样品的Ⅰ-V特性变化表明其串联电阻和反向漏电流不断增大,原因可归结为芯片欧姆接触的退化及芯片材料中缺陷密度的提高.样品的热特性变化显示出各结构层热阻均明显增大,这是由散热通道上各层材料的老化及焊料层出...
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| 关 键 词： | 大功率白光LED 老化 热阻 失效分析 |
| 收稿时间： | 2011-06-24 |
The Aging Characteristics of High-power GaN-based White Light-emitting Diodes |
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| ZHOU Zhou,FENG Shi-wei,ZHANG Guang-chen,GUO Chun-sheng,LI Jing-wan. The Aging Characteristics of High-power GaN-based White Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2011, 32(10): 1046-1050 |
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| Authors: | ZHOU Zhou FENG Shi-wei ZHANG Guang-chen GUO Chun-sheng LI Jing-wan |
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| Affiliation: | School of Electronic Information&Control Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | Accelerated aging test at the temperature of 85 ℃ were carried out on high-power GaN-based white light-emitting diodes. The degradation of main performance parameters was investigated. After 6 500 h, the luminous flux rate of the samples was declined about 28% to 33%. Series resistance and reverse leakage current increased with the aging time, which were caused by the degradation of ohmic contact and the increase of the defect density, respectively. The thermal resistance components of LEDs increased gradually. Based on the C-SAM measurement, some voids appeared in the die attach. The experiment results suggested that the degradation both in chip and packaging lead to the invalidation devices. |
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| Keywords: | high-power white LED aging test thermal resistance failure analysis |
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