Performance of La<sub>2</sub>O<sub>3</sub>/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors |
| |
Authors: | Feng Qian ab Li Qian ab Xing Tao ab Wang Qiang ab Zhang Jin-Cheng ab and Hao Yue |
| |
Institution: | School of Microelectronics,Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University |
| |
Abstract: | We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse. |
| |
Keywords: | indium aluminum nitride metal-oxide-semiconductor high electron mobility transistor lanthanum oxide |
本文献已被 维普 等数据库收录! |