Fabrication and electrical characterization of p-Sb2S3/n-Si heterojunctions for solar cells application |
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Authors: | KF Abd-El-Rahman AAA Darwish |
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Institution: | aPhysics Department, Faculty of Education, Ain Shams University, Rorxy 11757, Cairo, Egypt;bBasic Science Department, Faculty of Engineering, The British University in Egypt, El-Sherouk City, Egypt;cPhysics Department, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahweet, Yemen |
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Abstract: | Antimony trisulphide (Sb2S3) films were prepared by thermal evaporation technique on n-type single crystal Si substrates to fabricate p-Sb2S3/n-Si heterojunctions. The electrical transport properties of the p–Sb2S3/n-Si heterojunctions were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The temperature-dependent I–V characteristics revealed that the forward conduction was determined by multi-step tunnelling current and the activation energy of saturation current was about 0.54 eV. The 1/C2–V plots indicated the junction was abrupt and the junction built-in potential was 0.6 V at room temperature and decreased with increasing temperature. The solar cell parameters have been calculated for the fabricated cell as Voc = 0.50 V, Jsc = 14.53 mA cm−2, FF = 0.32 and η = 4.65% under an illumination of 50 mW cm−2. |
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Keywords: | Heterojunctions Photovoltaic I&ndash V characteristics |
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