The nature of domain stabilization in ferroelectric perovskites |
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| Institution: | 1. School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang, 330063, PR China;2. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, 710072, China;1. Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002, India;2. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, WB 721302, India;3. Department of Physics, Acharya Narendra Dev College, University of Delhi, New Delhi 110019, India;4. Department of Applied Physics, Delhi Technological University, Delhi 110042, India;5. Department of Metallurgical & Materials Engineering, Indian Institute of Technology, Kharagpur, WB 721302, India;6. Bundelkhand University, Jhansi, UP 284002, India;1. Department of Physics & Astronomy, National Institute of Technology, Rourkela 769008, India;2. Department of Materials Engineering, Indian Institute of Science, Bangalore 560012, India;1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, South Korea;2. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea;1. Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Key Laboratory of New Processing Technology for Non-Ferrous Metals and Materials, Ministry of Education, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China;2. Center on Nanoenergy Research, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China;3. College of Materials Science and Engineering, Guilin University of Technology, Guilin, 541004, China |
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| Abstract: | Ferroelectric perovskites, such as Pb(Ti,Zr)O3 and BaTiO3, are subject to ageing effects, caused by a gradual stabilization of the ferroelectric domain structure. We studied the development of this stabilization in Mn-doped BaTiO3 monocrystals having a special kind of domain structure. We concluded from measurements of the growth of the internal bias field Ei and the change of the sideways 180° domain-wall mobility with time, that the fairly strong stabilization in this material originates from volume effects, which implies a gradual reorientation of polar defects with respect to the direction of the spontaneous polarization, both 180° domain-wall pinning and surface-layer effects being completely absent. A proposal is made about the nature of these defects. |
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