Diffusion hall effect in compensated metals |
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| Affiliation: | 1. Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China;2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;1. Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China;2. College of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China;3. Shenyang National Laboratory for Materials Science, Northeastern University, Shenyang, 110819, China;4. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003, China |
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| Abstract: | Analytical investigation is made of the electron-hole diffusion in compensated media like semimetals, which takes place under crossed electric and magnetic fields. It is shown that the diffusion of carriers causes a transverse field effect different to the usual Hall one, if the conducting medium is bounded. The transverse voltage due to this effect increases almost linearly with the magnetic field (H), and changes its sign according to the polarity of H. This voltage is observable even for bulk specimens for which the usual size effect is negligible, but its appearance is easily masked in the presence of impurities. A detailed discussion is made for bismuth, considering a non-parabolic model for the electron Fermi surface. The transverse voltage is found to be very sensitive to the surface recombination velocity of the carriers as well as to the impurity concentration. |
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