| Abstract: | Investigation and identification of special imperfections of silicon single crystals prepared by gas doping and zone floating are reported. Investigation methods used are etch technique, X-ray topography and electron beam micro-analysis. It was stated that the investigated imperfections show oxygen clusters. A possible growth process of such imperfections is discussed. In conclusion, first results of investigations on the effects of such imperfections during the formation of p–n junctions are given. |
