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Studies of defect structure effects on the transport properties of pure crystalline n-CdS VIA the temperature dependence of photoacoustic and photocurrent spectra
Affiliation:1. School of Civil Engineering, Qingdao University of Technology, Qingdao 266033, PR China;2. Key Laboratory of Marine Environmental Corrosion and Bio-fouling, Institute of Oceanology, Chinese Academy of Sciences, Qingdao 266071, PR China;3. School of Material Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, PR China;1. College of Energy, Xiamen University, Xiamen 361102, China;2. Fujian Engineering and Research Centre of Clean and High-valued Technologies for Biomass, Xiamen Key Laboratory of Clean and High-valued Utilization for Biomass, Xiamen 361102, China;3. Centre for Green Chemical Science, University of Auckland, Auckland 1142, New Zealand;1. Department of Physics ‘E.R. Caianiello’, University of Salerno, Via Giovanni Paolo II 132, Fisciano 84084, Italy;2. CNR-SPIN Salerno, Via Giovanni Paolo II 132, Fisciano 84084, Italy;3. Dipartimento di Scienze e Tecnologie, Università Del Sannio, Via de Sanctis, Benevento 82100, Italy;4. Fakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, Germany;1. Department of Chemistry, NIS Centre of Excellence and INSTM Reference Center, University of Turin, Via P. Giuria 7, 10125 10 Torino, Italy;2. Umicore Denmark ApS, Nøjsomhedsvej 20, 2800 Kgs. Lyngby, Denmark
Abstract:Microphone gas-coupled photoacoustic spectroscopy (PAS) and photocurrent spectroscopy (PCS) have been applied simultaneously to pure high resistivity single crystals of n-CdS at room and low temperatures. The PA and PC spectra obtained at open-circuit and with an applied AC or DC transverse electric field were consistent with an enhancement of the non-radiative recombination quantum efficiency at subbandgap wavelengths at room temperature, accompanied by increasing domination of the open circuit PA spectrum by this parameter at lower temperatures. Further evidence of the importance of non-radiative carrier recombinations at intrabandgap defect centers in the generation of the PA and PC signals was obtained upon introducting deliberate mechanical damage to a single crystal of CdS. The PA technique was found to have an advantage over PC spectroscopy in its ability to spectrally resolve completely the observed peaks attributed to the intrinsic band-to-band transition and to the wavelength dependence of the non-radiative quantum yield.
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