| Abstract: | {111}-, {110}- and {100}-plates of GaAs have been etched in various etching solutions followed by comparing the obtained etching structures. The fundamentals of the discussion is the existing correlation between the morphology of etch pits and crystal structure. It is shown that a qualitative interpretation of the manifold etching phenomena on the above faces in a structure characteristic for GaAs can be given by including 1. the presence of primary defects as a constitutive property of real crystals and 2. the consideration of recordable influences of the surroundings. |
