| Abstract: | A method for the preparation of GaAs layers of different thickness on GaAs from solutions of Ga at constant temperatures is described using inner cooling of the substrate holder by a gas flow. The dependence of the growth rate on the intensity of inner cooling, movement of the substrate holder, and on growth temperature is given and explained. Furtheron is shown that constitutional supercoolung can be avoided by means of a suitable temperature profile and absence of periodic temperature fluctuations. |
