Effect of statistical fermi level shift on the Meyer-Neldel rule of a-Si:H conductivity |
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| Institution: | 1. Sensors and Glass Physics Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143005, Punjab, India;2. Department of Chemistry and Process & Resource Engineering, University of Cantabria, Santander-39005, Spain |
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| Abstract: | Effect of the statistical Fermi level shift on the Meyer-Neldel rule of a-Si:H conductivity was studied using the temperature dependence of MOSFET conductivity. A model is presented in which the temperature dependence of surface band bending in a MOSFET should compensate for the statistical Fermi level shift of bulk a-Si:H. This compensation is verified by the SiO2 thickness dependence of the MOSFET conductivity. The pre-exponential factor obtained by analysis of the temperature dependence of MOSFET conductivity does not show the Meyer-Neldel rule. It is therefore concluded that the Meyer-Neldel rule observed in bulk a-Si:H conductivity is predominantly caused by the statistical Fermi level shift. |
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