Thermodynamic study of the solubility process of boron in silicon carbide,grown from the vapour phase |
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| Institution: | 1. College of Civil Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;2. School of Energy and Environment, Southeast University, Nanjing 210096, China;1. IFW Dresden, Institute for Complex Materials, Helmholtzstrasse 20, D-01069 Dresden, Germany;2. Politehnica University of Timisoara, P-ta Victoriei 2, RO-300006 Timisoara, Romania;3. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences (ÖAW), Jahnstrasse 12, A-8700 Leoben, Austria;4. Department Materials Physics, Montanuniversität Leoben, Jahnstrasse 12, A-8700 Leoben, Austria;5. ETH Zurich, Department of Materials, Metal physics und Technology, Vladimir-Prelog-Weg 4, HCI J 492, 8093 Zürich, Switzerland;6. Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Winterbergstrasse 28, 01277, Dresden, Germany |
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| Abstract: | The thermodynamics of the solubility process of the acceptor impurity boron in silicon carbide is investigated. The thermodynamic analysis of equilibrium in the Si-C-B system has been carried out and the temperature dependences of the partial pressures of interacting components are determined for the temperature interval (1800–3000) K.The calculation of the Fermi level in p-SiC(B) is carried out. The heat of solution and the distribution coefficient of boron in silicon carbide are determined on the basis of the thermodynamic analysis of the Si-C-B system, the experimental temperature dependence of boron solubility and the calculation of the Fermi level and Fermi-Dirac distribution in p-SiC(B). |
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