Preparation,electrical properties and annealing of ZnGeAs2 |
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| Institution: | 1. University of Michigan, School of Dentistry, Department of Periodontics and Oral Medicine, Ann Arbor, MI, United States;2. University of Maryland, School of Medicine, Division of Pediatric Endocrinology, Baltimore, MD, United States;3. George Washington University, Biostatistics Center, Rockville, MD, United States;4. Harvard University, School of Dental Medicine, Department of Oral Medicine, Infection, and Immunity, Boston, MA, United States;5. University of Michigan, School of Medicine, Department of Internal Medicine, Division of Metabolism, Endocrinology and Diabetes, Ann Arbor, MI, United States;6. University of California, San Diego, School of Medicine, Department of Medicine, Division of Metabolism, Endocrinology and Diabetes, La Jolla, CA, United States;7. University of Michigan, School of Public Health, Department of Epidemiology, Ann Arbor, MI, United States;8. University of Michigan, School of Medicine, Department of Urology, Ann Arbor, MI, United States |
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| Abstract: | Crystals of ZnGeAs2 have been grown from solution (ZnxAsy solvent). Electrical properties of crystals before and after annealing in arsenic or phosphorus vapors are reported. The crystals are always (p) type. Assuming the electrical properties of the as grown crystals to be due to the zinc and arsenic vacancies, a mechanism is given to explain the change in free carrier concentration during annealing. A good fit is obtained between the observed and the calculated values. |
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