Impurity band conduction in CdHgTe crystals |
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| Institution: | 1. Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don, Russia;2. Rostov State Transport University, Rostov-on-Don, Russia;1. Laboratory for Microstructures/School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, 200072 Shanghai, PR China;2. Centre for Clean Environment and Energy, Griffith School of Environment, Griffith University, Gold Coast Campus, QLD 4222, Australia;1. Physics Department, Faculty of Science, Malayer University, Malayer, Iran;2. Department of Electrical Engineering, Firoozkooh Branch, Islamic Azad University, Firoozkooh, Iran;1. Laboratoire de la matière condensée et des nanosciences, Université de Monastir, 5019, Tunisia;2. Institut Néel, CNRS et Université Joseph Fourier, B.P. 166, 38042 Grenoble, France;1. Department of Physics, Akdeniz University, TR-07058, Antalya, Turkey;2. Faculty of Physics and Center for Nanointegration (CENIDE), Universität Duisburg-Essen, D-47048, Duisburg, Germany |
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| Abstract: | Electrical conduction at 77 K in CdxHg1−xTe, with the composition x ⩽ 0.2, is by electrons in the conduction band, by holes in the valence band and by holes in the impurity band. In samples with zero energy gap, x < 0.14, electrical conduction by holes in the valence band is comparable to electrical conduction by holes in the impurity band. In the open energy gap CdHgTe, electrical conduction by holes in the valence band is negligible in comparison to electrical conduction by holes in the impurity band. In CdHgTe samples, electrical conduction in the impurity band is described by the “Fermi Glass” model. |
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