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Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn |
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| Authors: | Jungang Zhang Changtai Xia Qun Deng Hongsheng Shi Jun Xu |
| Affiliation: | a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China b Graduate School of the Chinese Academy of Sciences, Beijing 100039, PR China c GE (China) Research and Development Center Co., Ltd., Shanghai 201203, PR China |
| Abstract: | Tin oxide doped β-Ga2O3 single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. β-Ga2O3 single crystals doped with different Sn4+ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn4+ concentrations and annealing. |
| Keywords: | A. Oxides B. Crystal growth C. X-ray diffraction D. Optical properties |
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