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Thermoelectric properties of Bi0.9Sb0.1 prepared by high pressure
Authors:Liu Hua-jun  Wu Yun-long  Huang Rong-jin  Song Chun-mei  Li Lai-feng
Institution:a Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, P.O. Box 2711, Beijing, 100080, PR China
b Graduate School of Chinese Academy of Sciences, Beijing, 100039, PR China
c Department of physics, Zunyi Normal College, 563002, Zunyi, PR China
Abstract:The Bi0.9Sb0.1 powders were prepared by mechanical alloying and then pressed under 6 GPa at different pressing temperatures. X-ray diffraction spectra showed that the single phase was formed. The nanostructure of grain was observed by bright-field imaging. Electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The absolute Seebeck coefficient value of 120.3 μV/K was measured at 130 K. The figure-of-merit reached a maximum value of 0.90×10−3 K−1 at 140 K.
Keywords:A  Semiconductors  C  High pressure  D  Electrical properties  D  Thermal conductivity  D  Transport properties
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