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Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature |
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| Authors: | Fu Hai Su Kun Ding Yuangfang Liu Wei Chen |
| Institution: | a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China b Nomadics, Inc., 1024 South Innovation Way, Stillwater, OK 74074, USA c Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99354 d Department of Physics, The University of Texas at Arlington, Arlington, TX 76019, USA |
| Abstract: | The temperature and pressure dependences of band-edge photoluminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of kBT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively. |
| Keywords: | D Luminescence D Phonon |
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