T-x diagram and transport properties of the GeSe-GeI2 solid electrolyte |
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Authors: | D N Danilov A P Leushina V P Zlomanov |
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Institution: | (1) Vyatka State University, ul. Moskovskaya 36, Kirov, 610000, Russia;(2) Faculty of Chemistry, Moscow State University, Leninskie gory, Moscow, 119992, Russia |
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Abstract: | The T-x diagram for the GeSe-GeI2 system was plotted based on DTA, XRD, and conductivity data. The diagram features a simple eutectic and a limited region of solid solutions with prevalent GeSe content. It was established that, in the region of solid solutions, the properties of the GeSe-GeI2 solid electrolyte are substantially dependent on the concentration of the GeI2 dopant. The highest conductivity (10?3?10?4 S/cm at 150°C), lowest activation energy of electric conduction (0.3–0.4 eV), and lowest electronic (hole) transport numbers (10?5?10?7 at 150°C) at high ionic (~1.0) and cationic (0.9–1.0) transport numbers were observed at a GeI2 concentration of 3–6 mol %. In the two-phase region, the transport properties (conductivity and activation energy of conduction) only slightly depend on the dopant concentration. |
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