Advanced poly-Si TFT with fin-like channels by ELA |
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Authors: | Huaxiang Yin Wenxu Xianyu Hans Cho Xiaoxin Zhang Jisim Jung Doyoung Kim Hyuck Lim Kyungbae Park Jongman Kim Kwon J Noguchi T |
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Institution: | Nano Devices Lab., Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea; |
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Abstract: | The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm/sup 2//V/spl middot/s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 10/sup 6/. |
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