Inhomogeneous strains in semiconducting nanostructures |
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Authors: | N A Gippius S G Tikhodeev |
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Institution: | (1) Institute of General Physics, Russian Academy of Sciences, 117942 Moscow, Russia |
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Abstract: | We have developed a numerical technique for calculating inhomogeneous strains in stressed semiconducting nanostructures, such
as quantum wires and dots manufactured by nanolithography from stressed InGaAs/GaAs quantum wells. The technique is based
on solving a linear problem of elasticity theory by the Green’s function method and presumes a lack of defects and dislocations
in nanostructure heterojunctions. Spatial distributions of strain tensor components and shifts of electron and hole potentials
in a nanostructure due to the strain have been calculated.
Zh. éksp. Teor. Fiz. 115, 1906–1914 (May 1999) |
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