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Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions |
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| Authors: | O. Shpotyuk A. Ingram B. Bureau Ya. Shpotyuk C. Boussard-Pledel V. Nazabal R. Szatanik |
| Affiliation: | 1. Lviv Institute of Materials of SRC “Carat”, 202, Stryjska str., Lviv 79031, Ukraine;2. Institute of Physics of Jan Dlugosz University, Al. Armii Krajowej 13/15, 42-201 Czestochowa, Poland;3. Faculty of Physics, Opole University of Technology, 75, Ozimska str., Opole 45370, Poland;4. Equipe Verres et et Céramiques, UMR-CNRS 6226, Institute des Sciences chimiques de Rennes, Université de Rennes 1, 35042 Rennes Cedex, France;5. Faculty of Electronics, Ivan Franko National University of Lviv, 50, Dragomanova Str., Lviv 79005, Ukraine;6. Institute of Physics, Opole University, 11-a, Kopernik sq., Opole 45040, Poland |
| Abstract: | Crystallization effects in Te20As30Se50 glass known also as TAS-235 affected by Ga additions to Ga2Te20As28Se50 and Ga5Te20As25Se50 compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga2Se3 droplets with character nanoscale sizes in partially-crystallized Ga2Te20As28Se50 alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga5Te20As25Se50 alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under the same principal chemical environment responsible for positron trapping in amorphous and partially crystallized substances. |
| Keywords: | A. Amorphous materials A. Chalcogenides C. Positron annihilation spectroscopy C. X-ray diffraction |
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