TEM and XPS studies on CdS/CIGS interfaces |
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Authors: | Jun-feng Han Cheng Liao Li-mei Cha Tao Jiang Hua-mu Xie Kui Zhao M-P Besland |
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Institution: | 1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3, France;2. Department of Physics, Peking University, Beijing 100871, China;3. School of Physics, Beijing Institute of Technology, Beijing 100081, China |
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Abstract: | Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations. |
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Keywords: | A Thin films A Chalcogenides A Interfaces C Electron microscopy C Photoelectron spectroscopy |
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