高功率微波与电子系统电路单元相互作用的理论分析

利用等离子体理论研究了电路中微波等离子体运动对电容元件的影响, 给出了 可能引起电路扰乱状态的参量条件. 当微波等离子体较稀薄时, 且微波的频率或等离子体电子的渡越时间高到一定程度时, 扰乱阈值与微波频率的平方成正比; 如果微波的频率或等离子体电子的渡越时间低到一定程度时, 其电场的特性接近直流特性, 扰乱阈值与微波频率没有明显的依赖关系. 从总体上看, 微波频率越低, 越容易扰乱集成电路的工作状态. 如果等离子体频率与高功率微波频率相接近, 则会产生共振效应, 此时等离子体电子的振荡的幅值会大幅度提高, 更容易扰乱电路的工作状态.

Theoretical Analysis of the Interaction between the High-Power Microwave and the Electronic Circuits

A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits.Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave.In addition,the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.