静电放电引起2SC3356潜在失效的研究

 研究了低电压的人体模型(HBM)静电放电（ESD）对微电子器件造成的潜在失效。分别从CB结和EB结对2SC3356晶体管施加低电压HBM的ESD应力,结果表明：从CB结施加低电压的ESD电应力，所产生的潜在失效的几率要高于从EB结施加低电压的ESD电应力产生的潜在失效几率，即CB结比EB结对低电压的ESD应力引入的潜在失效更为敏感。高温（≥125 ℃）寿命实验有退火效应，从而缓解了低电压的ESD应力使器件产生的潜在损伤，使静电放电过程中引入的潜在损伤自恢复。

Latent failure of 2SC3356 caused by electrostatic discharge

Latent failure study on the low-level human body model(HBM) electrostatic discharge(ESD) stresses on microelectric device was presented. The low-level ESD stresses were imposed on microwave low noise transistor 2SC3356 using the HBM from CB (collector-base) junctions and EB (emitter-base) junctions. It is shown that the CB junctions are more sensitive than the EB junctions, of the latent failure on 2SC3356 caused by low-level ESD and that high temperature (≥125 ℃) life tests bring about annealing effects and relief the latent defects caused by low-level ESD stresses.