首页 | 本学科首页   官方微博 | 高级检索  
     检索      

辐照三嵌段聚苯乙烯-丁二烯-4-乙烯基吡啶共聚物离子交换膜性能的研究——Ⅰ.季铵化、磺化试剂、反应温度对膜性能的影响
引用本文:梁良,应圣康.辐照三嵌段聚苯乙烯-丁二烯-4-乙烯基吡啶共聚物离子交换膜性能的研究——Ⅰ.季铵化、磺化试剂、反应温度对膜性能的影响[J].高分子学报,1991(6).
作者姓名:梁良  应圣康
作者单位:华东化工学院材料科学研究所,华东化工学院材料科学研究所 上海 200237,上海 200237
摘    要:本文分别研究了以氯磺酸、浓硫酸为磺化试剂及一碘甲烷、二碘甲烷为季铵化试剂所制备的辐照聚笨乙烯-丁二烯-4-乙烯基吡啶离子交换膜的膜交换当量、吸水率,膜电位及膜电导率的性能。研究表明以氯磺酸为磺化试剂所制备的离子交换膜其离子交换当量比以浓硫酸寿磺化试剂的要高。以一碘甲烷为季铵化试剂制备的离子交换膜其离子交换当量要比以二碘甲烷为季铵化试剂的要高,但机械强度差。在相同条件下,提高反应温度,有利于膜的季铵化反应,而不利于膜的磺化反应。所制备的阴、阳离子交挟膜膜交换当量、膜电导率、吸水率及膜电位四者的关系是膜交换当量高则膜电导率、含水率高,而膜电位则下降。

关 键 词:聚苯乙烯-丁二烯-4-乙烯基吡啶  辐照  离子交换膜  嵌镶膜  季铵化  磺化

PROPERTIES OF ION-EXCHANGE MEMBRANE FROM IRRADIATED POLY (STYRENEBUTADIENE-4-VINYLPYRIDINE) TRIBLOCK COPOLYMER I. EFFECT OF AMINATING SULFONATING AGENTS AND REACTION TEMPERATURE ON PROPERTIES OF ION EXCHANGE MEMBRANE
LIANG Liang and YING Shengkang.PROPERTIES OF ION-EXCHANGE MEMBRANE FROM IRRADIATED POLY (STYRENEBUTADIENE-4-VINYLPYRIDINE) TRIBLOCK COPOLYMER I. EFFECT OF AMINATING SULFONATING AGENTS AND REACTION TEMPERATURE ON PROPERTIES OF ION EXCHANGE MEMBRANE[J].Acta Polymerica Sinica,1991(6).
Authors:LIANG Liang and YING Shengkang
Abstract:In this paper, the properties of ion-exchange membrane prepared by irradiating poly(sty-rene-butadiene-4-vinylpyridine) triblock copolymer, with different sulfonating agents and qoa-ternizing agents were investigated. The results showed that the ion-exchange capacity of membrane sulfonated by chlorsulfonic acid is higher than that of membrane sulfonated by sulfonic acid. Although the ion-exchange capacity of membrane quaternized by methyl iodide is higher than that of membrane quaternized by methylene diiodide, mechanical properties of the former are too poor to form membranes. The ion-exchange membrane with higher ion-exchange capacity will result in lower concentration membrane potential, higher membrane conductivity and water content.
Keywords:Poly(styrene-butadiene-4-v nylpyridine)  Irradiation  amination  Sulfona-tion  Ion-exchange membrane  Charge-mosaic membrane  
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号