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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures |
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| Authors: | J Walz T Hesjedal E Chilla R Koch |
| Institution: | (1) Kyoto University Venture Business Laboratory, Kyoto, 606-8501, Japan, JP;(2) Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980, Japan, JP;(3) OE group, LG Corporate Institute of Technology, 16 Woomyon-Dong, Seocho-Gu, Seoul, 137-140, Korea, KR |
| Abstract: | Received: 7 September 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999 |
| Keywords: | PACS: 78 20 Wc 78 45 +h 78 40 Fy |
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