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Effects of interactions and disorder on the compressibility of two-dimensional electron and hole systems |
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| Authors: | E.A. Galaktionov G.D. Allison M.M. Fogler A.K. Savchenko S.S. Safonov M.Y. Simmons D.A. Ritchie |
| Affiliation: | aSchool of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK;bDepartment of Physics, University of California, San Diego, 9500 Gilman Drive, La Jolla, CA 92093, USA;cCavendish laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK |
| Abstract: | The compressibility χ of dilute two-dimensional electron and hole gases in GaAs semiconductor structures has been studied in the ranges of the interaction parameter rs=1–2.5 and rs=10–30 for the electron and hole system, respectively. Nonmonotonic dependence of χ-1 with an upturn at low carrier densities is observed. Despite the large difference in rs the behavior of χ-1 in both systems can be accurately described by the theory of nonlinear screening of disorder by the carriers. |
| Keywords: | Compressibility Metal– insulator transition Capacitance |
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