Effect of anode area on the sensing mechanism of vertical GaN Schottky barrier diode temperature sensor |
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Affiliation: | 1.School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;2.Institute of Technology and Science, Tokushima University, Tokushima, Japan |
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Abstract: | Effect of anode area on temperature sensing ability is investigated for a vertical GaN Schottky-barrier-diode sensor. The current-voltage-temperature characteristics are comparable to each other for Schottky barrier diodes with different anode areas, excepting the series resistance. In the sub-threshold region, the contribution of series resistance on the sensitivity can be ignored due to the relatively small current. The sensitivity is dominated by the current density. A large anode area is helpful for enhancing the sensitivity at the same current level. In the fully turn-on region, the contribution of series resistance dominates the sensitivity. Unfortunately, a large series resistance degrades the temperature error and linearity, implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability. |
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Keywords: | GaN temperature sensor Schottky contact vertical diode |
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