Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition |
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| Institution: | 1.School of Information Engineering, Zhengzhou University of Technology, Zhengzhou 450044, China;2.Engineering Research Center of Nuclear Technology Application(East China University of Technology), Ministry of Education, Nanchang 330013, China;3.State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;4.Engineering Department, Lancaster University, Lancaster, LA14 YW, United Kingdom |
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| Abstract: | Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD. |
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| Keywords: | ammonia borane dehydrogenation h-BN dual temperature zone |
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