Introducing voids around the interlayer of AlN by high temperature annealing |
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| Affiliation: | 1.College of Materials Science and Engineering, Shenzhen University-Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen 518060, China;2.College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;3.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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| Abstract: | Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices. |
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| Keywords: | AlN template AlN interlayer voids high-temperature annealing |
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