首页 | 本学科首页   官方微博 | 高级检索  
     检索      


A Mechanistic Switch in C-H Bond Activation by Elusive Fe\begin{document}$^\text{V}$\end{document}(O)(TAML) Reaction Intermediate: A Theoretical Study
Authors:Anran Zhou  Zhiqiang Fu  Xuanyu Cao  Yufen Zhao  Yong Wang
Institution:a.Institute of Drug Discovery Technology, Ningbo University, Ningbo 315211, Chinab.Key Laboratory of Industrial Ecology and Environmental Engineering (Ministry of Education), School of Environmental Science and Technology, Dalian University of Technology, Dalian 116024, Chinac.Qian Xuesen Collaborative Research Center of Astrochemistry and Space Life Sciences, Ningbo University, Ningbo 315211, China
Abstract:The divergent behavior of C-H bond oxidations of aliphatic substrates compared to those of aromatic substrates shown in Gupta's experiment was mechanistically studied herein by means of density functional theory calculations. Our calculations reveal that such difference is caused by different reaction mechanisms between two kinds of substrates (the aliphatic cyclohexane, 2, 3-dimethylbutane and the aromatic toluene, ethylbenzene and cumene). For the aliphatic substrates, C-H oxidation by the oxidant Fe\begin{document}$^{\rm{V}}$\end{document}(O)(TAML) is a hydrogen atom transfer process; whereas for the aromatic substrates, C-H oxidation is a proton-coupled electron transfer (PCET) process with a proton transfer character on the transition state, that is, a proton-coupled electron transfer process holding a proton transfer-like transition state (PCET(PT)). This difference is caused by the strong \begin{document}$\pi$\end{document}-\begin{document}$\pi$\end{document} interactions between the tetra-anionic TAML ring and the phenyl ring of the aromatic substrates, which has a "pull" effect to make the electron transfer from substrates to the Fe=O moiety inefficient.
Keywords:C-H bond activation  Hydrogen atom transfer  Proton coupled electron transfer  Density functional theory
点击此处可从《化学物理学报(中文版)》浏览原始摘要信息
点击此处可从《化学物理学报(中文版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号