Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
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Institution: | 1.Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 100192, China;2.Beijing Chip Identification Technology Co., Ltd., Beijing 102200, China;3.School of Electro-Mechanical Engineering, Xidian University, Xi'an 710071, China;4.Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract: | Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are experimentally investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas the current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, we realize that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded. |
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Keywords: | AlGaN/GaN HEMT fluorine plasma treatment off-state overdrive stress |
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