Charge density wave states in phase-engineered monolayer VTe2 |
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Affiliation: | 1.Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;2.MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China;3.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100084, China |
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Abstract: | Charge density wave (CDW) strongly affects the electronic properties of two-dimensional (2D) materials and can be tuned by phase engineering. Among 2D transitional metal dichalcogenides (TMDs), VTe$_{2}$ was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase. However, the CDW state of H-VTe$_{2}$ has been barely reported. Here, we investigate the CDW states in monolayer (ML) H-VTe$_{2}$, induced by phase-engineering from T-phase VTe$_{2}$. The phase transition between T- and H-VTe$_{2}$ is revealed with x-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) measurements. For H-VTe$_{2}$, scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) results show a robust $2sqrt 3 times 2sqrt 3 $ CDW superlattice with a transition temperature above 450 K. Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics. |
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Keywords: | charge density wave H-VTe2 phase engineering transitional metal dichalcogenides |
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