碲化镓纳米片中单斜晶相和六方晶相共存的光谱特征（英文）

快速发展的二维层状材料为构建新型高效的微纳发光器件和光电探测器件提供了新的平台.其中碲化镓纳米片备受关注,这是因为碲化镓从少层到块体都具有极强的发光性能,因而可以降低二维微纳器件的制备条件.然而碲化镓纳米片具有单斜和六方等多种晶相,使其发光特性和光谱结构异常复杂,目前还缺少对不同厚度碲化镓纳米片荧光光谱的系统研究.本文研究了不同厚度碲化镓纳米片的荧光光谱和拉曼光谱,以及荧光光谱从低温(4 K)到室温的演化行为.通过光谱分析,发现单斜晶相和六方晶相可能同时共存于多层碲化镓纳米片中.为了阐述相关实验结果,构建了如下原子结构模型:其中六方晶相位于纳米片的顶层与底层,而单斜晶相位于纳米片的中间位置.基于温度依赖的荧光光谱,可以获得六方晶相的光学带隙为1.849 eV,且该激子峰只能在较高温度(>200 K)下和声子辅助下才能表现出显著的荧光发射行为.进一步的实验结果确定了六方晶相的激子-声子相互作用强度约为1.24 meV/K.本工作证实了碲化镓纳米片中单斜晶相与六方晶相共存的实验现象,为研究碲化镓纳米片的晶相变化和激子动力学,以及探究碲化镓的奇异物理化学特性,提供了新的见解.

Signatures for Coexistence of Monoclinic and Hexagonal Phases in GaTe Nanoflakes

The burgeoning two-dimensional (2D) layered materials provide a powerful strategy to realize efficient light-emitting devices. Among them, gallium telluride (GaTe) nanoflakes, showing strong photoluminescence (PL) emission from multilayer to bulk crystal, relax the stringent fabrication requirements of nanodevices. However, detailed knowledge on the optical properties of GaTe varies as layer thickness is still missing. Here we perform thickness-dependent PL and Raman spectra, as well as temperature-dependent PL spectra of GaTe nanoflakes. Spectral analysis reveals a spectroscopic signature for the coexistence of both the monoclinic and hexagonal phases in GaTe nanoflakes. To understand the experimental results, we propose a crystal structure where the hexagonal phase is on the top and bottom of nanoflakes while the monoclinic phase is in the middle of the nanoflakes. On the basis of temperature-dependent PL spectra, the optical gap of the hexagonal phase is determined to be 1.849 eV, which can only survive under temperature higher than 200 K with the increasing phonon population. Furthermore, the strength of exciton-phonon interaction of the hexagonal phase is estimated to be 1.24 meV/K. Our results prove the coexistence of dual crystalline phases in multilayer GaTe nanoflakes, which may provoke further exploration of phase transformation in GaTe materials, as well as new applications in 2D light-emitting diodes and heterostructure-based optoelectronics.