多孔硅表面性质导致电致发光的进一步论证

用荧光分光光度法现场监测多孔硅在阳极偏压下于溶液中的电致发光行为 ,该电致发光行为主要取决于多孔硅本身的表面性质 .将电致发光实验后的多孔硅样品再次电解 ,并再次进行电致发光实验 ,发现其发光性能明显改善 ;实验表明 ,多孔硅在阳极偏压下的液相电致发光机制是由表面的Si_H键氧化向导带注入电子 ,并与阳极偏压注入的价带空穴进行复合而发光 ;此外 ,还发现了多孔硅于溶液中在阳极偏压下电压调制的可见光发射行为 ,并以量子限制效应对该现象进行了解释

Further Evidence for Surface Properties of Porous Silicon Resulting in Electroluminescence

The electroluminescence of porous silicon in solutions at positive biases was investigated by luminescence spectrometer. The electroluminescence of porous silicon in solutions mainly depended on its surface properties. The elelctroluminescence was much enhanced when the sample of porous silicon was electrolyzed once again which had undergone an electroluminescence test. The tests of both cyclic voltammetry and the luminescence of the sample of porous silicon prepared by repeated electrolysis provided further evidence that the electroluminescence of porous silicon in solutions at positive biases stemmed from the oxidation of Si_H on the surface of porous silicon. The voltage tunable emitting for porous silicon in formic acid_sodium formate solution at positive biases was revealed, which could be explained with the quantum confinement effect.