Electrical conductivity in amorphous Si(O or H)-Au films |
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Authors: | JJ Hauser |
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Institution: | Bell Laboratories, Murray Hill, NJ 07974, U.S.A. |
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Abstract: | SiO films obtained by sputtering in an ArO mixture with an oxygen partial pressure less than 3% are similar to a-Si films: the resistivity is proportional to exp (T0/T) and T0 increases with oxygen content and decreases with increasing Au concentration (? 3.7 at.%). On the other hand, above an oxygen partial pressure of 5% one obtains insulating amorphous SiO2 films. Conductivity appears in such films for Au? 13 at.% (? the percolation threshold) and then the resistivity is proportional to exp (T0/T). The same behavior is observed when oxygen is replaced by hydrogen. |
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