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Far infrared emission from plasma oscillations of Si inversion layers
Authors:D.C. Tsui  E. Gornik  R.A. Logan
Affiliation:Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
Abstract:We observed narrow-band far infrared emission from Si-MOSFETs with metallic gratings fabricated on the optically semitransparent gate. The gate voltage dependence of the emission frequency, analyzed by a magnetic field tuned detector, shows that it results from radiative decay of the two-dimensional metallic grating.
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