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Valence charge distribution and electric field gradients in GaAsAlAs mixed crystals
Authors:J. Ihm  Marvin L. Cohen  V.I. Safarov
Affiliation:1. Department of Physics, University of California, USA;2. Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A.
Abstract:Electric field gradients at the arsenic sites in the GaAsAlAs mixed compounds are calculated using the self-consistent pseudo-potential method. The result is in good agreement with recent nuclear quadrupole resonance (NQR) experiments and supports the interpretation that the NQR splittings arise from an Al ion relacing one of the four Ga ions near an As site.
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