Exponential absorption edge in hydrogenated α-Si films |
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| Authors: | B Abeles CR Wronski T Tiedje GD Cody |
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| Institution: | Corporate Research Laboratory, Exxon Research and Engineering Company, P.O. Box 45, Linden, NJ 07036, U.S.A. |
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| Abstract: | Optical and photoelectric measurements demonstrate that hydrogenated amorphous silicon prepared by glow discharge decomposition of silane has an exponential optical absorption edge, over the photon energy range 1.4–1.8 eV with a slope of 0.05–0.08 eV. Evidence is presented that the photogeneration efficiency is unity at room temperature and independent of electric field (102?104 V/cm?1) and photon energy (1.2–2.2 eV). |
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