Surface states in Si(111)2×1 and Ge(111)2×1 by optical reflectivity |
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| Authors: | S Nannarone P Chiaradia F Ciccacci R Memeo P Sassaroli S Selci G Chiarotti |
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| Institution: | 1. Istituto di Fisica dell''Università degli Studi di Roma, Rome, Italy;2. Gruppo Nazionale di Struttura della Materia del C.N.R., Rome, Italy |
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| Abstract: | Surface states in Si(111)2×1 and Ge(111)2×1 are detected by the method of the change of external reflectivity, both at energies below and above the gap. Optical transitions at 2.6 eV in Si and at 1.8 eV and 3.1 eV in Ge, as well as the already known transitions below the gap are observed. |
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