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Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures |
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| Authors: | K. Hess N. Holonyak W.D. Laidig B.A. Vojak J.J. Coleman P.D. Dapkus |
| Affiliation: | Department of Electrical Engineering and Coordinated Science Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.;Department of Electrical Engineering and Materials Research Laboratory University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.;Rockwell International, Electronic Devices Division Electronics Research Center, Anaheim, CA 92803, U.S.A. |
| Abstract: | Formulas are presented to calculate the heating of charge carriers and the generation of nonequilibrium phonons by intense photoexcitation of quantum-well heterostructures. It is shown that the deviations from thermal equilibrium are more pronounced for quasi-two-dimensional structures than for bulk material. Supporting experimental data are given on an MO-CVD AlxGa1-xAs-GaAs heterostructure consisting of a large GaAs quantum well (Lz ～ 200 Å) coupled to a phonon-generating array of seven small GaAs quantum wells (Lz ～ 50 Å). |
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