Luminescence and ESR studies of defects in hydrogenated amorphous silicon

New experimental information on luminescence and light induced ESR (LESR) in hydrogenated amorphous silicon is described. We demonstrate that the two experiments involve identical recombination transitions, and identify two separate processes. One process involves defect states, and from the doping dependence of LESR we deduce that the electronically active defects are dangling bonds with positive electronic correlation energy.