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Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6
Authors:CN Guy  S von Molnar  J Etourneau  Z Fisk
Institution:IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;Institute for Pure and Applied Physical Sciences University of California, San Diego, La Jolla, CA 92093, USA
Abstract:We present Hall Effect and resistivity data which demonstrate that EuB6 is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, Tc = 13.7K. We also report an anomalously large, positive pressure dependence of Tc, (1/Tc)(ΔTc/ΔP) ? 4 × 10?2 kbar?1.
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