Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6 |
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Authors: | CN Guy S von Molnar J Etourneau Z Fisk |
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Institution: | IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;Institute for Pure and Applied Physical Sciences University of California, San Diego, La Jolla, CA 92093, USA |
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Abstract: | We present Hall Effect and resistivity data which demonstrate that EuB6 is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, Tc = 13.7K. We also report an anomalously large, positive pressure dependence of Tc, (1/Tc)(ΔTc/ΔP) ? 4 × 10?2 kbar?1. |
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