The superconducting transition temperature of bulk samples of the niobium-germanium A15-phase after implantation of Ge,Si, O and Ar ions |
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Authors: | J Geerk |
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Institution: | Kernforschungszentrum Karlsruhe, Institut für Angewandte Kernphysik I, 7500 Karlsruhe, Postfach 3640, Federal Republic of Germany |
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Abstract: | Bulk material of Nb3 (Ge0.8Nb0.2) with A15 structure and a superconducting transition temperature Tc of 6.5 K has been implanted with Ge, Si, Ar and O ions and subsequently annealed at high temperatures. After annealing between 700 and 750°C the Ge implanted samples showed a strong increase in Tc up to 16.2 K. With Si ions only a Tc of 13 K was obtained, with Ar and O ions Tc remained below 9 K. From X-ray measurements carried out on high Tc Ge implanted samples it could be concluded that the implanted surface layer grows up to a high degree epitaxially on the single crystallites of the bulk material. The lattice constant 0 of the implanted film was reduced by 0.02 Å with respect to the bulk material. This reduction in 0 is stronger than expected from the transition temperature of the implanted surface layer. |
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