Pressure dependence of the electrical resistivity and the ionization energy of Cr In n-type InP

The electrical resistance of chromium-doped, n-type InP has been found to increase exponentially with hydrostatic pressure (up to 4.7 kbar) at 273 K, 301 K, and 344 K. The resistivity activation energy increases by 6.5 × 10^-6 eV/bar. This rate equals the difference between the pressure dependences of the lowest conduction band minimum at $\text{k}$ = (000) and the <111> subsidiary minima determined by others. Our results indicate that pressure increases the ionization energy of a Cr donor level whose wave function has a large contribution from the <111> minima. It is suggested the Cr donor level is due to Cr⁺³ occupying an indium site.