The influence of high uniaxial stress on the ΓI,C conduction band effective mass of gallium arsenide |
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| Authors: | J.C. Portal R.A. Cooke R.A. Stradling A.R. Adams C.N. Ahmad |
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| Affiliation: | INSA, Dept. de Physique, Ave de Rangueil, 31077, Toulouse, France;Clarendon Laboratory, Parks Road, Oxford OX1 3PU, England;Dept. of Physics, University of St Andrews, North Haugh, St Andrews KY16 9SS, Scotland, UK;Physics Dept., University of Surrey, Guildford, Surrey GU2 5XH, England |
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| Abstract: | From a study of the Zeeman splitting of the shallow donor states, the variation of the effective mass in the ΓIC conduction band minimum of gallium arsenide has been measured as a function of applied uniaxial stress. The effective mass is found to be proportional to the stress, the percentage increase being (0.23 ± 0.06), (0.115 ± 0.015) and (0.075 ± 0.015) kbar?1 for 〈100〉, 〈110〉 and 〈111〉 stress respectively. The precision inherent in the far-infrared technique employed is greater than that of previous experimental methods. |
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