Variable range hopping in Si:P at very low temperature |
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Authors: | Y Ootuka F Komori Y Monden S Kobayashi W Sasaki |
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Institution: | Department of Physics, Faculty of Sciencce, University of Tokyo, Tokyo 113, Japan |
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Abstract: | The resistivity of doped semiconductor Si: P in the intermidiate concentration range was measured in low temperature region down to 10 mK. In the lowest temperatures Mott's formula for the variable range hopping is shown to be not applicable and T-n-like temperature dependence of resistivity is confirmed. The Importance of the level correlation in the random system is discussed. |
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