Gap states in hydrogenated amorphous silicon: A comparison of photoemission and photoconductivity results |
| |
Authors: | B. von Roedern G. Moddel |
| |
Affiliation: | Division of Applied Sciences, Gordon McKay Laboratory Harvard University, Cambridge, Massachusetts 02138, U.S.A. |
| |
Abstract: | We report photoemission results from which we directly determined the density of states g(E) in the gap of a-Si:H between the top of the valence band Ev and the Fermi level. At 0.4 eV above Ev, g(E) was found to be ≈1×1020 cm-3 eV-1 in the undoped film; P-doping increased g(E) in this region whereas annealing reduced it. The photoconductivity-derived optical absorption spectrum matched the shape of the photoemission spectrum, and thus supports the explanation that the photoconductivity shoulder at photon energies in the region of 1.3 eV is due to transitions from localized states above the valence band to the conduction band. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|