Phonon-assisted Auger recombination in Si with direct calculation of the overlap integrals

The overlap integrals are calculated for Si by means of the full zone double group k · p-method whereas they are usually roughly estimated. The results confirm that phonon-assisted Auger recombination is the predominating radiationless recombination mechanism in indirect band gap semiconductors. This holds not only for highly doped materials but also for electron- hole drops.