Mössaauer studies of83Kr implanted in semiconductors and metals

Mössbauer spectroscopy of the 9.4 keV transition in⁸³Kr has been performed using sources of⁸³Rb implanted in the group IV semiconductors diamond, silicon, germanium and tin and in the metals Cu, Ag, Au, Mo and W. From the line widths and isomer shifts information has been obtained on possible lattice sites of the impurities. In most cases a site with large isomer shift, thought to correspond to a compression of the krypton atom was observed. This site is interpreted to represent purely substitutional impurities. In Mo and W a well-defined vacancy release stage was observed, leading to a reduction of the isomer shift and a line broadening.