Electron probe microanalysis and local cathodoluminescence studies of multilayer heterostructures based on InGaN/GaN |
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| Authors: | Ya V Domracheva M V Zamoryanskaya T B Popova E Yu Flegontova |
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| Institution: | (1) Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | This paper presents the results of the study on multilayer heterostructures based on InGaN/GaN grown by MOCVD. A new procedure to measure the composition and depth of InGaN quantum wells and AlGaN barrier layers is developed. Features of luminescence from different depths of the multilayer heterostructure are analyzed. |
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